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| 2N4400, 2N4401 NPN Version 2004-01-20 General Purpose Transistors Si-Epitaxial PlanarTransistors NPN Power dissipation - Verlustleistung Plastic case Kunststoffgehause Weight approx. - Gewicht ca. Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert Standard Pinning 1=C 2=B 3=E 625 mW TO-92 (10D3) 0.18 g Standard packaging taped in ammo pack Standard Lieferform gegurtet in Ammo-Pack Maximum ratings (TA = 25C) Collector-Emitter-voltage Collector-Base-voltage Emitter-Base-voltage Power dissipation - Verlustleistung Collector current - Kollektorstrom (dc) Junction temp. - Sperrschichttemperatur Storage temperature - Lagerungstemperatur B open E open C open VCE0 VCE0 VEB0 Ptot IC Tj TS Grenzwerte (TA = 25C) 2N4400, 2N4401 40 V 60 V 6V 625 mW 1) 600 mA 150C - 55...+ 150C Characteristics (Tj = 25C) Min. Collector saturation volt. - Kollektor-Sattigungsspannung IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA Collector cutoff current - Kollektorreststrom VCE = 35 V, VEB = 0.4 V Emitter cut-off current - Emitterreststrom VCE = 35 V, VEB = 0.4 V IEBV - ICBV - VCEsat VCEsat VBEsat VBEsat - - 750 mV - Kennwerte (Tj = 25C) Typ. - - - - - - Max. 400 mV 750 mV 950 mV 1.2 V 100 nA 100 nA Base saturation voltage - Basis-Sattigungsspannung 1 ) Valid, if leads are kept at ambient temperature at a distance of 2 mm from case Gultig, wenn die Anschludrahte in 2 mm Abstand von Gehause auf Umgebungstemperatur gehalten werden 34 General Purpose Transistors 2N4400, 2N4401 Characteristics (Tj = 25C) Min. DC current gain - Kollektor-Basis-Stromverhaltnis VCE = 1 V, IC = 0.1 mA VCE = 1 V, IC = 1 mA VCE = 1 V, IC = 10 mA VCE = 1 V, IC = 150 mA VCE = 1 V, IC = 500 mA 2N4401 2N4400 2N4401 2N4400 2N4401 2N4400 2N4401 2N4400 2N4401 hFE hFE hFE hFE hFE hFE hFE hFE hFE 20 20 40 40 80 50 100 20 40 Kennwerte (Tj = 25C) Typ. - - - - - - - - - - - - - - - - - - - - - - - Max. - - - - - 150 300 - - h-Parameters at VCE = 10 V, IC = 1 mA, f = 1 kHz Small signal current gain Kleinsignal-Stromverstarkung Input impedance - Eingangs-Impedanz Output admittance - Ausgangs-Leitwert Reverse voltage ratio - Spannungsruckwirkg. Gain-Bandwidth Product - Transitfrequenz VCE = 10 V, IC = 20 mA, f = 100 MHz VCB = 10 V, IE = ie = 0, f = 1 MHz VEB = 2 V, IC = ic = 0, f = 1 MHz Switching times - Schaltzeiten turn-on time delay time rise time turn-off time storage time fall time ton td tr toff ts tf - - - - - - RthA 35 ns 15 ns 20 ns 255 ns 225 ns 30 ns 200 K/W 1) 2N4402, 2N4403 2N4400 2N4401 fT fT CCB0 CEB0 200 MHz 250 MHz - - - - 6.5 pF 30 pF hfe hie hoe hre 40 1 kS 1 S 0.1 *10-4 500 15 kS 30 S 8 *10-4 Collector-Base Capacitance - Kollektor-Basis-Kapazitat Emitter-Base Capacitance - Emitter-Basis-Kapazitat ICon = 150 mA IBon = 15 mA - IBoff = 15 mA Thermal resistance junction to ambient air Warmewiderstand Sperrschicht - umgebende Luft Recommended complementary PNP transistors Empfohlene komplementare PNP-Transistoren 1 ) Valid, if leads are kept at ambient temperature at a distance of 2 mm from case Gultig, wenn die Anschludrahte in 2 mm Abstand von Gehause auf Umgebungstemperatur gehalten werden 35 |
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